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A low noise 50×100 µm2 pnp pin phototransistor is presented in this paper. The phototransistor is fabricated in a 0.35 µm CMOS process. An optimized layout leads to responsivities up to 1.99 A/W and bandwidths up to 151.4 MHz. Noise measurements show a low total output current noise spectral density of only 6.67×10−24 A2/Hz for a collector current of 2 µA.
A time-of-flight range finding sensor using a monolithic integrated pnp phototransistor is presented. The phototransistor was specially adapted for the requirements of the time-of-flight application. The sensor has a fill factor of 75 % and achieves standard deviations down to 7.3 mm at 6250 fps and an incident optical power of −40 dBm.
In this paper a noise model for phototransistors is presented. Noise measurements and Gummel measurements on four different phototransistors were performed to verify the noise model. In addition, the output noise current density was modeled and compared with the measurements. A maximum difference of less than 12 % is noticed.
Time-of-Flight (TOF) sensors using different kinds of integrated phototransistors as photodetectors are presented in this work. The sensors as well as the phototransistors are implemented in a standard 180 nm CMOS process. A fill factor of 67 % is reached. At optimal working points of the phototransistors standard deviations better than 2.6 mm are achieved.
In this work we present the first approach of a Time-Of-Flight (TOF) sensor with an integrated bandwidth enhanced pnp phototransistor. The pixel reaches a fill factor of 67 %. A standard 180 nm CMOS process was used for implementing the TOF sensor together with the phototransistor. Both were combined to an optoelectronic integrated circuit. The power consumption of the sensor was 900 nW. Standard...
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