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The traps induced degradation of the Al2O3 and LaAlO3 based InGaAs nanowire FETs are investigated by 3D Kinetic Monte-Carlo (KMC) method considering trap coupling and trap generation. The measurement time constants of the defect in Al2O3 and positive bias temperature instability (PBTI) can be well interpreted by consideration with metastable state. The power law of threshold shift can be greatly affected...
An atomic Monte-Carlo simulator of Conductive Bridge Random Access Memory (CBRAM) is developed to investigate the microscopic properties of filament growth and dissolution during Forming/SET and RESET processes. The cluster growth during nucleation correlated with electrochemical reactions and cations transportation are included. The impacts of the critical material parameters on the geometry of conductive...
TiN/HfOx/Al/Pt resistive switching random access memory (RRAM) devices were fabricated and investigated. The HfOx based RRAM with Al inserted layer showed bipolar resistive switching phenomenon. As a result of the improvement of uniformity contributed by Al atoms' diffusion into HfOx film, robust self-compliance multilevel operation during set and reset process was reported. The possible mechanism...
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