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This paper investigates noise behavior under low and high drain biases of high-voltage metal–oxide–semiconductor field-effect transistors (MOSFETs) (HV-MOSFETs). A dedicated setup is presented which allows measuring low-frequency (LF) noise of lateral double-diffused MOSFETs (LDMOSFETs) up to 200 V at the drain. LF noise spectra of n- and p-channel LDMOSFETs were measured over a large range...
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