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We present for the first time in-depth analysis of the outstanding endurance characteristics of an ALD-based confined phase change memory (PCM) [1] with a thin metallic liner. Experimental results confirm that both the proper metallic liner and the confined pore cell structure are required for a reliability advantage. This confined PCM with a metallic liner is found to be immune to classic endurance...
BEOL-friendly Access Devices (AD) based on Cu-containing MIEC materials[1–4] are shown to be capable of both maintaining and moving rapidly between all the roles necessary for 3D crosspoint memory (un-selected, half-selected, selected(read), and selected(write)). Ultra-low leakage is maintained over hours, recovery dynamics after both write (30–50uA) and read (3–6uA) operations are explored, and read...
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