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Sn-Ag-Cu (SAC) solder is one of the most promising candidates to replace Sn-Pb (SnPb) solder alloys. Reducing the amount of Ag phase is an important approach to obtain new SAC solders with lower cost. In this article, different proportions of Bi element were added into Sn-1.0Ag-0.5Cu (SAC105) lead-free solders. The melting points of these alloys are examined and the corresponding tensile properties...
Thermal ageing of micro-porous sintered silver was examined under high temperature exposure. Silver sinter paste was printed in a shape of a tensile specimen on a Cu substrate, and was sintered at 250 °C for 1 h in air with no pressure. Specimens were exposed for 0, 50, 500, and 1000 h at 250 °C. Tensile strength was obtained at each ageing stage at a strain rate of 1.0×10−5/s. The evolution of microstructure...
We have investigated finite element method (FEM) modeling of thermal stress analysis in a SiC power module using sintering Ag die-attach, and explored the reliability focusing on the initial cracking point caused by the thermal stress. The analysis results by FEM models support our experimental observations in the reliability tests of the fabricated modules, confirming that using direct-bonded-copper...
In terms of die-attach for high TJ device, metallization on the backside of the bare chip and the substrate surface affect the high-temperature reliability of the joint due to the accelerated atomic diffusions. We evaluated two types of electroless plated metallization schemes which are Ni/Ag and Ni/Pd/Pt/Ag, respectively. High temperature storage of 250 °C for 500 h was used to test the high temperature...
Silver nanowires (AgNWs) transparent electrodes have attracted considerable attention owing to their high electrical and thermal conductivity, optical transparency, flexibility on many polymer substrates, and simple solution process. Many reports only focused on improving the performance of AgNWs electrodes while ignored the application lifetime considering that silver nanomaterials are susceptive...
The developments of SiC power devices have been dramatically advanced for the last several years, and are gaining much attention as a key technology for the low carbon society. These SiC power devices are expected to work under the high temperature condition of 250–300 °C because of the wide band-gap energy and the high heat resistance. To meet the high temperature operations, the die-bonding materials...
Electromigration behavior of Sn-3.0wt%Ag-3.0wt%Bi-4.0wt%In (SABI) and SABI+Co solder joints with respect to the crystallographic orientation of Sn grains was investigated. The test sample had direct contact on Cu substrate with Cu dummy chip and the applied direct current was 20 A at 125 °C solder joint temperature. Before current stressing SABI solder solidified to form large Sn grains. After current...
Die-bonding for a nitride light-emitting diode (LED) by sintering of micrometer size Ag particles in air at 200°C was investigated. Micrometer size Ag particles absorb oxygen remarkably well at 200°C and above, and on sintering, they form a porous layer. The activating temperature of the sintering is in good agreement with the oxygen adsorption temperature. Sintering does not progress in the absence...
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