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This paper shows SPICE simulation results of active guard ring structures which are typically employed in Smart Power ICs. Active guard rings act as barriers limiting the flow of minority carriers injected into the substrate toward sensitive circuits. The physical mechanisms involved in the active guard rings are confirmed with SPICE simulation for the first time and are in good agreement with those...
This paper investigates noise behavior under low and high drain biases of high-voltage metal–oxide–semiconductor field-effect transistors (MOSFETs) (HV-MOSFETs). A dedicated setup is presented which allows measuring low-frequency (LF) noise of lateral double-diffused MOSFETs (LDMOSFETs) up to 200 V at the drain. LF noise spectra of n- and p-channel LDMOSFETs were measured over a large range...
This paper presents a modeling methodology for substrate current coupling mechanisms. An equivalent schematic is made using enhanced model of resistances and diodes. These enhanced components were developed in previous work and account for minority and majority carrier propagation inside the semiconductor substrates. For the first time an equivalent schematic accounting for minority carrier is validated...
In this paper, a modeling methodology able to create an equivalent schematic of an High-Voltage integrated circuit is developed. The equivalent schematic is based on enhanced model of diodes and resistances, accounting for minority and majority carrier propagation at their boundary. In this work, the methodology to interconnect these elements in order to be able to model multi-dimensional current...
This paper presents a modeling methodology for substrate current coupling mechanisms. An enhanced model of the diode ensuring continuity of minority carriers is used to build an equivalent schematic, accounting for minority and majority carrier propagation in the substrate. For the first time a typical H-bridge structure is simulated with the proposed methodology. The parasitic current injected in...
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