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A normal incidence Ge/Si avalanche photodiode (APD) with the separate-absorption-charge-multiplication structure is characterized when the temperature ranges from 78K to 330K. At low temperature (78K), the dark current is depressed significantly as expected, which helps to detect a weak optical signal (as low as 1nW).
In summary, we have presented the experimental results for characterizing the temperature dependence of Ge/Si SACM APDs. The dark current increases by a factor 2 every 10οC at Vbias= -15V. Due to the temperature dependence of the ionization rate, the gain G increases by around 1.3 times for a temperature reduction of ΔT=10οC. The measured GBP is over 400GHz and The GBP is not sensitive to the temperature...
A simple matrix-method model is presented for calculating the impedance and the short-circuit frequency response of an avalanche photodiode (APD) with arbitrary layer structures and absorption/multiplication coefficients. In our matrix method model, the depletion region of the APD is divided into many thin layers. In each thin layer the absorption and the multiplication coefficients are assumed to...
An equivalent circuit model for a separate-absorption-charge-multiplication Ge/Si avalanche photodiode is presented. The current dependence of the resonance frequency scales with square root of current, as expected.
We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes both with high performances. The gain-bandwidth product was measured as high as 340 GHz and the receiver sensitivity was -28 dBm and -30.4 dBm for mesa-and waveguide-type devices, respectively.
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