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In this article, the reliability of HfO2-based RRAM devices integrated in an advanced 28nm CMOS 16kbit demonstrator is presented. In order to improve the memory performance, a thin Al2O3 layer is inserted in the HfO2-based memory stack (TiN/Ti/HfO2/Al2O3/TiN). Thanks to extensive electrical characterizations on both single layer HfO2 and bilayer HfO2/Al2O3 memory stacks at device and array levels,...
In this paper, for the first time, the reliability of HfO2-based RRAM devices integrated in an advanced 28nm CMOS 16kbit demonstrator is presented. The effect of the introduction of a thin Al2O3 layer in TiN/Ti/HfO2/Al2O3/TiN is explored to improve the memory performances. Thanks to the in-depth electrical characterization of both HfO2 and HfO2/Al2O3 stacks at device level and in the 16×1kbit demonstrator...
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