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A biocompatible and functional interface can improve medical applications of bioelectronic. Here, 3-aminopropyl trimethoxysilane (APTMS) and 3-mercaptopropyl trimethoxysilane (MPTMS) self-assembled monolayers (SAMs) were used to modify the surface of silicon nanowire (NW) -MOSFETs. AFM and electrical pH sensing verified which monolayer was capable of performing better electrical signal for subsequent...
This is the first study to successfully achieve record DNA sensitivity (sub-ƒM) by self-aligned, maskless, dual-channel, and metal-gate-based thin-film transistor nano-wire FET. Both novel device architecture (dual-channel) and optimization of integration processes (microcrystalline silicon and self-aligned sidewall sub-50 nm critical dimension) of nano-wire FET enhance the sensitivity to biological...
Biointerface between biological organisms and electronic devices has attracted a lot of attention since a biocompatible and functional interface can revolutionize medical applications of bioelectronics. Here, we used 3-aminopropyl trimethoxysilane (APTMS) self-assembled monolayer (SAM) to modify the surface of nanowire-based metal-oxide-semiconductor field-effect transistors (NW-MOSFETs) for pH sensing...
In this paper, we developed a fiber type system for glucose absolute concentration measurement that integrated a pair of fiber sensors and heterodyne interferometry. The pair of the fiber sensors was constructed of single mode fibers which immobilized the glucose oxidase (GOx) on the core. Our studies show that the response time and resolution will be highly affected by the pH properties between the...
This study investigates a high Q-factor spiral inductor fabricated by the CMOS (complementary metal oxide semiconductor) process and a post-process. The spiral inductor is manufactured on silicon substrate using the 0.35 mum CMOS process. In order to reduce the substrate loss and enhance the Q-factor of the inductor, silicon substrate under the inductor is removed using a post-process. The post-process...
The fabrication of a nanowire WO 3 humidity sensor integrated with an inverting amplifier circuit and a micro-heater on a chip using the commercial 0.35μm complementary metal oxide semiconductor (CMOS) process and a post-process have been implemented. The humidity sensor is composed of a sensing resistor and a humidity sensing film. Tungsten trioxide prepared by a sol–gel method is adopted...
The fabrication of a carbon monoxide (CO) micro gas sensor integrated with an inverting amplifier circuit and a micro heater on chip using the commercial 0.35mum complementary metal oxide semiconductor (CMOS) process and a post-process have been implemented. The gas sensor is composed of a polysilicon resistor and a CO gas sensing film. Tin dioxide prepared by the sol-gel method is adopted as the...
The fabrication of a micromachined radio frequency (RF) switch using the commercial 0.35 mum complementary metal oxide semiconductor (CMOS) process and a post-process has been implemented. The RF switch, which is capacitive shunt type, is composed of coplanar waveguide (CPW) transmission lines, supported springs and a suspended membrane. The post-process requires only a wet etching sacrificial layer,...
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