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The paper presents test results of electronic components candidate for spacecraft obtained on low (3-6 MeV/nucleon) and high (20-40 MeV/nucleon) energy heavy ion test facilities. In addition to obtaining experimental data, the purpose of the study was to demonstrate the availability of such high-energy facilities in Russia, by comparing the test results with earlier data, obtained on the same devices...
The design and experimental results are presented for the fault-tolerant 0.35 ìm SOI CMOS microprocessor. DICE-like cells are shown to be vulnerable to SEU during “read” and “write” modes.
This paper presents SEE test facility as well as its opportunities of integrated microcircuit tests in the temperature range. The used method of heating and cooling of DUT was considered in vacuum chamber of test facility.
The results on SEE sensitivity of 0.5 µm SOI CMOS microprocessor are presented and discussed. The comparative analysis of different test techniques (particle accelerator, pulsed laser technique and 252Cf fission source) is provided for the cache. The possible sources of discrepancies between test results and the ways of data correction and methods of testing techniques' accuracy improvement are discussed.
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