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The influence of an additional annealing in the base/emitter module fabrication of state-of-the-art DPSA-SEG SiGe:C HBTs is studied in this paper. The objective of this annealing is to reduce the extrinsic base resistance RBx which in previous studies appeared to limit fMAX of DPSA-SEG SiGe HBTs. TCAD simulations and on-silicon measurements are presented for two different base widths. It is shown...