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Up-converted photoluminescence of GaN nanowires is observed at the temperature above 375 K. At 475 K, the mechanism of the photoluminescence was identified as phonon-assisted bandtail emission. Such a phenomenon contributes to optical refrigeration.
Laser cooling of solids based on anti-Stokes photoluminescence was proposed in 1929 [1]. Indeed, through the light emission based on phonon-assisted anti-Stokes photoluminescence, the average photon energy emitted is larger than that for the absorbed pump photons. The difference between the emitted and absorbed photon energies is made up by the energy of each removed phonon. Since phonons represent...
We demonstrate that photoluminescence and terahertz intensities show complementing trends for staggered InGaN quantum wells (QWs), dictated by separation of electrons and holes.
We demonstrate that as the period of multiple InGaN/GaN quantum wells is increased from 1 to 16, photoluminescence intensity exhibits strong saturation whereas output power of broadband THz pulses is scaled up superlinearly.
We have observed anti-Stokes photoluminescence from n-type free-standing GaN, pumped at the excitation photon energy of 1.586 eV, due to three-photon absorption.
We have observed dramatic photoluminescence quenching caused by relocation of photogenerated electrons under large internal electric fields, inherent in GaN/AlN asymmetric-coupled quantum wells.
Deep ultraviolet photoluminescence peaks up to 5.1 eV with dramatically improved intensities are observed in GaN/AlN asymmetric-coupled quantum wells, due to recombination of electrons in AlN coupling barriers with heavy holes in GaN quantum wells.
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