The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We propose and demonstrate a dynamic self-adaptive write method (DSWM) for the first time, which fixes the reliability problem that over-set or over-reset degrades ReRAM endurance and retention of tail bits significantly. The demonstration is carried out on a 128Kb test macro of AlOx/WOx bi-layer ReRAM fabricated based on 0.18µm standard logic Al interconnect. Results show that the mean value of endurance...
A 0.13µm 8Mb CuxSiyO resistive memory test macro with 20F2 cell size is developed based on logic process for the first time. Smart and adaptive assist write and read circuit are proposed and verified in order to fix yield and power consumption issues from large write speed and high temperature resistance variation. SAWM (self-adaptive write mode) helps to enlarge Roff/Ron window from 8X to 24X at...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.