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The first publication on fabrication of a 300 mm size, 50 μm ultra-thin glass interposer is presented. According to measured data and modeling analysis, merits of on-glass inductors and transmission lines outperform those of on-silicon in Q-factor, power dissipation, and power/signal integrity. Glass interposer is a promising building block technology for future hybrid mixed signal heterogeneous chip...
The variation of saturation drain current (Id,sat), induced by the random dopant variation (RDF), has been extensively studied by a new multivariate analysis method. It was found that the variation of Id,sat is originated from Vth,sat and saturation velocity (Vsat), while the variation of Vth,sat comes from the drain induced barrier lowering (DIBL). However, the experimental results shows that Vsat...
The PBTI is an important issue in the high-k dielectric nMOSFET devices in the present CMOS technology. In this paper, Random telegraph noise (RTN) technique was employed to investigate the stressed-induced traps and their correlation to the hot carrier and PBTI effects. It was found that the positions of stress-induced traps (SITs) are mostly located in the high-k layer, but not close to the high-k/SiO...
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