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This paper proposes a new design technique of a stable, low input impedance, high sensitivity, high gain and low-power Potentiostat using carbon nanotube FETs (CNTFETs) at 32 nm level that utilizes different input voltages for verifying voltage follower performance. The fully differential architecture suppresses the common mode interference. Extensive simulations have been performed to investigate...
This manuscript reports and analyzes 12-CNTFET and GDI CNTFET based full adder implementation at 32 nm level. As figures of merit, stability, power dissipation and Power Delay Product (PDP) are considered for the best overall performance. Intensive HSPICE simulations have been performed to investigate the distribution of the power and delay of the CNTFET-based full adders. Both circuit has noticeable...
The main objective of this paper is to design a novel threshold voltage detector circuit using carbon nanotube field effect transistor (CNTFET). This circuit is simulated in HSPICE by using HSPICE model of CNTFET. The uniqueness of this proposed circuit is that the threshold voltage of each CNTFET decides each voltage detection level where as in CMOS implementation a complex band-gap reference circuit...
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