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This paper presents a GaN power-switch MMIC and demonstrates its potential and its versatility in realizing power amplifier (PA) modules for future LTE base station transmitters with an increased digital content. The MMIC provides a compact high-gain broadband voltage-mode PA. With a TTL-level input voltage swing of 0.4 Vpp it reaches a large-signal gain of up to 40 dB. The PA can be used as a building...
In this paper an analytical derivation of vector network analyzer (VNA) measurement uncertainties due to non-ideal calibration standards for unknown thru calibration (UOSM or UXYZ) is presented. Simple equations for the sensitivity coefficients are obtained. This allows a deep insight into the error propagation mechanism as well as an easy implementation into calibration software.
This paper presents a compact dual-band voltage-mode class-D power amplifier module suitable for the LTE frequency bands at 0.8 GHz and 1.8 GHz. It uses a broadband GaN voltage-mode PA MMIC and a hybrid lumped element dual-band filter structure. The amplifier can handle various pulse-mode or digital modulation schemes. For a pulse-width modulated input signal the PA achieves a maximum output power...
GaN devices are getting highly mature in the field of microwave electronics covering power applications at frequencies ranging from a few 100 MHz to almost 100 GHz. This success is due to specific GaN material properties providing highly compact and therefore very fast devices. GaN material properties, consequently adopted for high voltage switching devices, have the potential to revolutionize general...
In this work the current status of a novel Barium-Strontium-Titanate (BST) based discrete tunable RF-power GaN-HEMT transistor is presented. A π-design prototype is evaluated for tunable networks in a load-pull investigation at 0.9 GHz, 1.3 GHz, and 2.0 GHz. It is shown that the individual GaN-cell BST networks can handle more than 2 W output power but the network losses reduce the drain efficiency...
In this work the current status of a novel Barium-Strontium-Titanate (BST) based discrete tunable RF-power GaN-HEMT transistor is presented. A π-design prototype is evaluated for tunable networks in a load-pull investigation at 0.9 GHz, 1.3 GHz, and 2.0 GHz. It is shown that the individual GaN-cell BST networks can handle more than 2 W output power but the network losses reduce the drain efficiency...
In this paper, a high-gain X-band MMIC power amplifier is presented. The amplifier is based on 0.25µm-gate GaN HEMTs and realized as coplanar circuit using the 4-inch process line at FBH. The circuit delivers almost 9 W output power at 10 GHz, with final stage drain efficiency of 32%.
Reliability tests at different ambient temperatures and biasing conditions have been performed on GaInP/GaAs heterojunction bipolar transistors. The epitaxial layer structure of the transistors has been grown by MOVPE, device processing utilized a triple mesa approach to access the base and collector regions and to perform interdevice isolation. A GaInP ledge structure suppresses excessive surface...
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