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This paper presents a feasibility study that the drift-diffusion model can capture the ballistic transport of FinFETs and nanowires with a simple model extension. For FinFETs, Monte Carlo simulation is performed and the ballistic mobility is calibrated to linear & saturation currents. It is validated that the calibrated model works over a wide range of channel length and channel stress. The ballistic...
Semi-classical and quantum transport approaches are applied and compared to analyze the relative driving strength of nmos nanowires compared to FinFETs at 5nm design rules. Both transport approaches show better-than-expected nanowire drive current. The reason for this strong performance is explained in terms of electrostatic and subband structure effects. The impact of scattering on the fin to nanowire...
We benchmark planar MOSFETs, FinFETs, and nanowires in a wide range of design rules, spanning from 90nm down to 2nm. This benchmarking evaluates inverter switching speed for a load of 70 metal pitches long interconnect wire and a fan-out of one. Planar MOSFET logic slows down sharply at 14nm design rules, mainly due to short-channel effects reducing the driving strength at a fixed off-state leakage...
The SiGe source/drain is going to be the main stress source for the 14 nm PMOS FinFET due to the tight gate pitch and due to the gate-last high-k metal gate (HKMG). This paper explores key challenges of FinFET stress engineering that is based on the epitaxial SiGe S/D. These challenges are FinFET- specific and can be addressed by carefully balancing several design and process trade-offs simultaneously...
The impact of body-thickness scaling on strain-induced carrier-mobility enhancement in thin-body CMOSFETs with high-k/metal gate stacks, based on quantum-mechanical simulations calibrated with measured data, is presented to provide insight into device performance enhancement trends for future technology nodes.
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