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The influence of forward current freewheeling time on the reverse recovery di/dt robustness of Superjunction (SJ) MOSFET body diode is investigated in detail. It is found that the maximum di/dt capability of body diode is improved dramatically with reducing the forward current freewheeling time. To explore this phenomenon, physical TCAD simulations and experiments have been carried out. It shows that...
This paper presents static and dynamic characterization of 100V and 650V Gallium Nitride power transistor from root temperature to 150°C, and a physical explanation of the device on-resistance behavior at elevated temperature was provided. This device physics-based understanding would benefit those application engineers who selects GaN HEMT power transistor to design a robust and energy efficient...
In recent years, geostationary Earth orbit mobile satellite communications has seen rapid development. The satellite/terrestrial integrated communication networks with Long‐Term Evolution technology have become a research emphasis. China proposed the Radio Interface Technology of Broadband Multimedia Satellite (BMSat) as a candidate to be considered as the satellite component of International Mobile...
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