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We built a 4-channel photonic carrier with input/output SiN waveguides and a flip-chip-attached SOA array, incorporating end-to-end reflection-management and mode-matching. All channels demonstrate fiber-to-fiber gain of >10dB and support error-free 4-λ × 25-Gb/s WDM links.
Hybrid integration of a 4 -- channel semiconductor optical amplifier array onto a silicon photonic carrier with integrated SiN waveguides has been demonstrated. Custom packaging features are designed into the silicon photonic carrier, including efficient waveguide optical coupling structures, an etched trench with metal lines and AuSn solder pads for SOA integration, and vertical reference stops for...
A 1.9 μm hybrid silicon/III-V laser based on a wafer bonding technique is reported. The gain materials are InGaAs multiple quantum wells grown on InP substrate, with strain compensation between barriers and wells. The III-V wafer is bonded to a silicon-on-insulator wafer with processed silicon waveguides and transition tapers. Laser emission with a threshold current of 95 mA at room temperature and...
We report a novel Ge waveguide photodetector and the fabrication on silicon-on-insulator (SOI) platform. Localized stressor structures were incorporated to tune the responsivity roll-off wavelength. With the localized stressor structure, the roll-off in responsivity is found to be red-shifted from 1520 nm to beyond 1620 nm, i.e., a flat responsivity over the entire C- and L-band is obtained. This...
Silicon photonics, being an important technology platform for a wide range of applications, demands an easily assessable fabrication foundry with the flexibility desired for research and development of integrated photonics circuits, as well as with the manufacturing path required for volume production.
We report an SOI based 1×4 coarse wavelength-division-multiplexer (CWDM) planar concave grating multiplexer/demultiplexer and its application in re-configurable optical add/drop multiplexer (ROADM) system. We employed recursion numerical method to build a low aberration, non-circle grating circle model of concave grating. We fabricated the device using CMOS compatible silicon planar integration technology...
We report a novel evanescent-coupled germanium electro-absorption modulator with a small active area of 16 μm2 giving an extinction ratio of ~dB for a wavelength range of 1580-1610 nm. In addition, monolithic integration of both evanescent-coupled Ge electro-absorption modulator and Ge p-i-n photodetector is demonstrated for the first time.
We report a SOI based 1×4 coarse wavelength-division-multiplexer (CWDM) planar concave grating multiplexer/demultiplexer and applications in re-configuration optical add/drop multiplexer (ROADM) system. For design, we employed recursion numerical method to build a low aberration, non-circle grating circle model of concave grating. For experiment, CMOS compatible silicon planar integration technology...
By leveraging on the wealth of Si-CMOS technology know-how and the largely available infrastructures, the fundamental photonic device building blocks and circuit integration platform, essential for the realization of the electronic-photonic integrated circuit (EPIC), have been successfully developed. This presentation gives an overview on the current status of this critical technology and provides...
We propose optical switches in which the heater is fabricated directly on the slab region of the rib waveguide. Two types of Heater-on-Slab (HoS) switches were investigated. In the first type, the silicon slab regions are doped highly to form the heaters. For this type of switches, the switching power is ~85 mW and the switching time is ~27 μs. In the second type, a strip of metal in direct contact...
Subwavelength horizontal Al/SiO2/Si/SiO2/Al plasmonic slot waveguides with SiO2 width at each side of ~15 nm and Si width of ~136, ~87, and ~43 nm are fabricated on SOI substrates using fully CMOS compatible processes. The propagation losses at 1550 nm TE are ~1.01, ~1.31, and ~1.56 dB/μm, respectively, as measured by the standard cutback method. A simple taper coupler with length of ~0.3-1 μm provides...
By leveraging on the wealth of Si-CMOS technology know-how and the largely available infrastructures, the fundamental photonic device building blocks and circuit integration platform, essential for the realization of the electronic-photonic integrated circuit (EPIC), have been successfully developed. This presentation gives an overview on the current status of this critical technology and provides...
A silicon waveguide based splitter is a key device for polarization diversity circuit. A bilayer waveguide structure was proposed by MIT to split the input light into its orthogonal components. It is challenging to fabricate a bilayer silicon waveguide by the conventional two-step-etching process due to precise alignment and accurate etch thickness required. In addition, the partial etched waveguide...
Research into the limits of electrical interconnects indicates that metal wire is unlikely to be the ultimate solution to support the growing functionalities of next generation microprocessor. Severe information latency and power consumption are key technological challenges facing the traditional copper interconnects which impose tremendous constraints to keep up with the performance roadmap known...
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