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Using quantitative high-electron-mobility-transistors (HEMTs)-based defect spectroscopy, the degradation mechanisms of GaN HEMTs subjected to proton irradiation were explored to understand how these devices would operate in high radiation applications. It was observed that proton irradiation in GaN HEMTs caused a permanent threshold voltage (VT) shift (0.59 V) that led to a 30% reduction in IDS, max...
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