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In this paper we present a new measurement technique for extracting dynamic on-resistance (Rdson) of GaN transistors. Dynamic Rdson of commercial GaN transistors in soft-switching and hard-switching conditions have been measured. By comparing the dynamic Rdson in both switching schemes, it is found that the off-state drain voltage stress is the main cause for the increase of dynamic Rdson, while the...
For efficient operation in the 10 MHz range, a resonant power converter needs a power MOSFET with very low capacitance for a given on-state resistance and an integral turn-off driver. The former allows the resonant frequency to be high and the gate drive losses low, while the latter avoids the parasitic inductance of bond wires used to connect the gate to an external driver. The reasons and methods...
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