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Random telegraph signal (RTS) and 1/f noise is investigated in Ge nanowire field effect transistors with NiGe Ohmic contacts and a Si/SiO2 back gate. Dominant, trap-related, two-level or multilevel RTS noise with relative amplitude in the 10–30% range is usually observed at drain currents below ID=1nA. For higher currents, 1/f noise becomes dominant. With the current increase, the normalized power...
Summary In this work we report on the formation, of copper-germanide/germanium nanowire (NW) heterostructures with atomically sharp interfaces. The copper-germanide (Cu3Ge) formation process is enabled by a chemical reaction between metallic Cu pads and vapor-liquid-solid (VLS) grown Ge-NWs. The atomic scale aligned formation of the Cu3Ge segments is controlled by in situ SEM monitoring at 310 °C...
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