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Growing good quality III–V epitaxial layers on Si substrate is of utmost importance to produce next generation high-performance devices in a cost effective way. In this paper, using physical analysis and electrical measurements of Esaki diodes, fabricated using molecular beam epitaxy grown ${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$ layers on Si substrate, we show that the valley current density is...
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