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Future Army power systems will require utilizing high-power and high-voltage SiC devices in order to meet size, weight, volume, and high power density for fast switching requirements at both component and system levels. This paper presents the modeling and simulation of a high voltage (>12kV) silicon carbide PiN diode for high action pulsed power applications. A model of a high power PiN diode...
Advanced high-voltage (10 kV–15 kV) silicon carbide (SiC) power MOSFETs described in this paper have the potential to significantly impact the system performance, size, weight, high-temperature reliability, and cost of next-generation energy conversion and transmission systems. In this paper, we report our recently developed 10 kV/20 A SiC MOSFETs with a chip size of 8.1 × 8.1 mm2 and a specific on-resistance...
An advanced evaluation system for experimental high power silicon (Si) and silicon carbide (SiC) Super Gate Turn Off Thyristors (SGTOs) with custom data acquisition and characterization electronics was designed and built in a cooperative agreement between engineers at Texas Tech University's (TTU) Center for Pulsed Power and Power Electronics (P3E) laboratory and research scientists at the U.S. Army...
An advanced evaluation system for experimental high power Super Gate Turn Off Thyristors (SGTOs) with built — in custom data acquisition and characterization electronics was designed and built in a cooperative agreement between engineers at Texas Tech University's Center for Pulsed Power and Power electronics (P3 E) laboratory and research scientists at Army Research Lab (ARL). The system consist...
The silicon carbide SGTO is a future switching component technology of interest to the Army for various pulsed power applications. The research presented in this paper investigates the dV/dt immunity and recovery time (Tq) capability of 1.0 cm2 silicon carbide (SiC) super gate turn-off thyristors (SGTOs). The 1.0 cm2 SiC SGTO is the largest chip based silicon carbide thyristor reported. The SiC SGTO...
In a continuing effort to reduce the weight and volume of high-power pulse switches, the U.S. Army Research Laboratory and Silicon Power Corp. have developed new Super-GTO-based switch modules that out-perform previous designs while maintaining compact size. These switch modules have recently been demonstrated at a 50% increase in hold-off voltage and 30% increase in pulse current (compared to switches...
The U.S. Army Research Laboratory (ARL) has conducted research on silicon super gate turn-off thyristors (SGTOs) for high action pulse switching required for survivability and lethality systems. The silicon SGTO designed by Silicon Power Corporation (SPCO) was evaluated to determine its stable, repeatable peak pulse current capability at wide and narrow pulse-widths. The Si SGTO design has a 3.5 cm...
Newly designed, high-power silicon gate turn-off thyristors are being evaluated to satisfy the U. S. Army's need for compact, lightweight pulse switches. Following the successful demonstration of a 3.5 cm2 silicon Super-GTO, Silicon Power Corporation re-designed the emitter layout and increased the device footprint to create a switch optimized for use in high-current, wide-pulse applications. The...
Silicon carbide Super-gate turn-off thyristors (SGTOs) are currently being pursued by the Army as a substitution for present silicon-based, pulsed-power switches. The solid-state modules discussed in this paper were designed and fabricated by Silicon Power and Cree, packaged by Arkansas Power Electronics, and evaluated at the Army Research Laboratory. The module consisted of four SiC GTO die that...
Power devices made on Silicon Carbide (SiC) are expected to offer significant advantages over silicon due to its unique material properties. For pulse power applications, SiC Gate Turn-Off thyristors (GTOs) have been pursued as a substitute for present silicon-based, pulsed-power switches. An update on the device's performance since the pulse work presented at the 2009 Pulse Power Conference is highlighted...
Silicon carbide diodes are being pursued by the Army as a compact, power-dense replacement for silicon diodes in various applications. Diodes are typically needed to protect other circuit components from reverse voltages and currents. Improvements in micropipe density and manipulation of basal plane dislocations, along with increased wafer size, allow for fabrication of larger area silicon carbide...
Silicon carbide Super-GTOs are being pursued by the Army as a replacement for current silicon-based, high-power pulse switches. The devices discussed in this paper were designed and fabricated by Silicon Power and Cree and evaluated at the Army Research Laboratory. The chips were packaged in groups of four to create the first modules of silicon carbide Super-GTOs. Each switch module contains four...
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