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Numerical and experimental studies of several types of 3-mm wavelength illumination antennas were carried out. The illumination antennas are intended for use in an active radio-vision system disposed in the near-field scattering region of objects. An efficient and constructive-simple leaky wave antenna was designed. The antenna is constructed on the basis of the standard rectangular waveguide with...
The present paper concerns a problem solution of current flowing through the channel of a distributed Schottky diode included in the detector circuit. Impedance of a diode as a main linear characteristic of an element is calculated. Volt-watt and ampere-watt sensitivities, as the main characteristics of the detector, are determined.
We present the results of development of a 3-mm wavelength video imaging system. The external EM radiation is detected with an 8 × 8 detector array illuminated by an aspheric lens, which forms an image, and a digital control unit. Some measured characteristics of the array elements (antenna element patterns, sensitivity, etc.), optical characteristics of the imaging system (point spread function,...
Characteristics of new sensitive microwave detectors with a symmetrical low-barrier structure metal-semiconductor-metal (MSM) are studied. Circuits for connection of detectors to microwave and low frequency registration tracts are discussed. Expressions for volt-watt sensitivity and noise equivalent power are obtained and comparisons with characteristics of zero-bias Schottky (Mott) detectors are...
GaAs FET with a single sub-surface delta-doped channel is realized. The source and the drain have a tunnel ohmic contact to the channel with rather low contact resistance <10−4 ohm cm2. A gate leakage current does not exceed 1 μA in the bias range −1.5…+0.5 V. Due to the extremely thin active region of FET, their current is very sensitive to condition of GaAs surface.
Results of noise and impedance optimization of a W-band receiver-module are given. A wideband compact receiver-module for MM wave passive imaging array has been developed on the basis of InP MMIC LNA and a highly sensitive impedance matched low-barrier detector diode. Achieved bandwidth is 85-100 GHz, the gain factor is 30 dB that was sufficient to provide 15 mK/Hz1 temperature sensitivity of the...
The effect of active layer homogeneous doping in a low-barrier metal-semiconductor contact with near-surface delta-doping on current and capacitance characteristics have been investigated. Difference in characteristics of diodes with Mott and Schottky contacts develops with increasing doping, which results in partial active layer depletion. For really important thickness of an active layer in microwave...
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