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Metal-insulator-metal (MIM) capacitors have been fabricated with single dielectric stack (Gd2O3) and bilayer dielectric stacks of Eu2O3 and Gd2O3 (Gd2O3/Eu2O3 and Eu2O3/Gd2O3) for analog and DRAM applications. While Pt/Gd2O3/Pt capacitors provide the highest capacitance density (15 fF/µm2), Pt/Gd2O3/Eu2O3/Pt and Pt/Eu2O3/Gd2O3/Pt capacitors provide lower leakage current densities (1.2×10−5 A/cm2 and...
We report the first demonstration of metal–insulator–metal (MIM) capacitors with dielectric for analog and DRAM applications. The influence of different anneal conditions on the electrical characteristics of the fabricated MIM capacitors is studied. FG anneal results in high capacitance density (7 ), whereas oxygen anneal results in low quadratic...
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