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Air-stable and area-selective doping strategies have eluded 2D materials and thus been a major bottleneck in realizing the plethora of semiconductor devices which require an built in electric field accessible from a p/n junction. Here, we demonstrate the possibility of p-doping through Vacancy Engineering, which unlike previous reports of molecular/substitutional doping is both area/dopant controllable...
Variability and difficulty in achieving good ohmic contacts are major bottlenecks toward the realization of high-performance molybdenum disulphide (MoS2)-based devices. The role of surface state engineering through a simple sulfur-based technique is explored to enable reliable and superior contacts with high work function (WF) metals. Sulfur-treated multilayered MoS2 FETs exhibit significant improvements...
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