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A fundamental constraint in the use of newer NAND Flash devices in the enterprise space is the low cycling endurance of such devices. As an example, the latest 2-bit MLC devices have a cycling endurance ranging from 3K to 10K program/erase cycles. Upcoming higher-density devices are expected to have even lower endurance. In this paper we propose a coding technique called Adaptive Endurance Coding...
We study memories capable of storing multiple bits per memory cell, with the property that certain state transitions ??wear?? the cell. We introduce a model that is relevant for Phase Change Memory, a promising emerging nonvolatile memory technology that exhibits limitations in the number of particular write actions that one may apply to a cell before rendering it unusable. We exploit the theory of...
Phase Change Memory (PCM) is an emerging memory technology that can increase main memory capacity in a cost-effective and power-efficient manner. However, PCM cells can endure only a maximum of 107-108 writes, making a PCM based system have a lifetime of only a few years under ideal conditions. Furthermore, we show that non-uniformity in writes to different cells reduces the achievable lifetime of...
We present a novel analytical model for the RESET operation of Phase Change Memory (PCM) that explicitly describes the dependency of the programming current on various cell dimensions and material parameters. This model also explains, for the first time, the fundamental physics behind the inverse relationship between dynamic resistance(Rd) and the amplitude of the programming current.
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