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With the aim of manufacturing faster and smaller devices, the electronic industry is today entering into the nanoscale and the high frequency regimes. In this particular scenario, the dynamics of the electron charge becomes affected by quantum mechanical laws, both, for its spatial or temporal description. We have recently shown that Bohmian trajectories allow a direct treatment of the time-dependent...
Power dissipation constitutes a major constriction in modern and future nanoelectronic design [1]. In this context, predictive models elucidating new criterions to control Joule heating would be valuable. In this work we reveal how an accurate formulation of the many-body Coulomb correlations among carriers can lead to new perspectives on the design of power-optimized electron devices. In particular,...
With the aim of manufacturing faster and smaller devices, the electronic industry is today approaching both the nano and the picosecond scales. In this particular scenario, electron dynamics becomes strongly correlated both in space and time. We have recently shown that Bohmian trajectories allow a direct treatment of the time-dependent many-particle interaction among electrons with accuracy comparable...
The main goal of this work is to study the effect of the structure geometries on the time dependent current in the nano electronic devices. The Ramo-Shockley-Pellegrini theorems are used together with many-particle Monte Carlo simulator to study this problem. In particular, it is shown that when the lateral surfaces (Ly, Lz) where the total current is collected are decreased, while keeping the longitudinal...
Today, the necessity of faster and smaller devices is pushing the electronic industry into developing electron devices with solid-state structures of few nanometers. In these dimensions electron dynamics are in general governed by quantum mechanical laws. We have recently shown that Bohmian trajectories allow a direct treatment of the many-particle interaction among electrons with an accuracy comparable...
An accurate formulation of the electric power in ballistic (classical or quantum) nanoscale devices is presented. The redefinition of the electric power is computed within a many-electron framework (where the dynamic of each electron is determined by its own electric field). The traditional definition of the electric power is compared with the new reformulation presented here for classical double-gate...
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