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In this paper, we present a highly scaled bulk metal-oxide-semiconductor field-effect transistor with block oxide (BO) and source/drain (S/D)-tied structure that meets the International Technology Roadmap for Semiconductors requirements for high-performance devices. This new device requires only a simple BO fabrication process using SiGe-Si epitaxial growth with selective SiGe removal and requires...
A new planar-type body-connected FinFET structure produced by the isolation-last self-align process is demonstrated and characterized by using three-dimensional (3-D) numerical simulations. The new process step first defines the gate region and then the active region, thus it can achieve fully self-alignment undoubtedly. Besides, due to the isolation-last process (ILP), an additional body region (ABR)...
An ultimate n-shaped source/drain (π-S/D) metal-oxide semiconductor (MOS) transistor is proposed in this paper. The method used to fabricate the proposed π-S/D transistor is based on both the classical and modern techniques (such as, Si-SiGe epitaxial growth, selective SiGe removal, etc.) that can be controllable and repeatable. Also, a new and simple process without the need of an additional mask...
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