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A new STI-type FinFET structure with its body region been connected is demonstrated and characterized by using three-dimensional (3-D) numerical simulations. From the simulation results, the STI-type FinFET shows that the short-channel effects (SCEs) and the off-state leakage current are proved to be reduced because the threshold voltage (VTH) roll-off and the drain-induced barrier lowering (DIBL)...
In this study, we propose a novel polysilicon thin-film transistor with multi-trenched body (MTB TFT). According to the ISE-TCAD simulations, our proposed MTB TFT gets a steep subthreshold swing (S.S.), a reduced drain-induced barrier lowering (DIBL), a lower drain off-state leakage, and a higher ION/IOFF ration, in comparison with a conventional poly-Si TFT. In addition, due to the MTB scheme, the...
This paper examines the effect of block oxide height (HBO) on a self-aligned (SA) source/drain-tied n-shaped block oxide field-effect transistor (S/D-tied nBOFET). According to the simulation results of a two-dimensional (2-D) numerical simulator DESSIS, the height of the block oxide is one of the important parameters for the suppression of short-channel effects (SCEs). Hence, the forming of HBO becomes...
A novel device architecture-the self-aligned pi-shaped source/drain (S/D) ultrathin silicon-on-insulator (UTSOI) FET-is presented for the first time in the field of silicon-on-insulator (SOI) technology; this new device demonstrates how to decrease the self-heating effects in the SOI-based devices. Two-dimensional simulations show that the cost of building an S/D tie into the UTSOI-FET is a modest...
In this work, a novel fully depleted silicon-on- insulator MOSFET with block oxide (bFDSOI) is proposed to investigate the influence of Si-body thickness on the characteristics of the device. Based on the two-dimensional (2-D) simulation results, the proposed structure exhibits better ultra-short-channel behavior such as reduced drain-induced barrier lowering (DIBL) and better subthreshold swing when...
In this paper, we propose a novel fully depleted silicon-on-insulator MOSFET with block oxide enclosed body (bFDSOI). To differ with the conventional FDSOI MOSFET, the proposed SOI structure shows enhanced performance by exploiting sidewall spacer process. For this new bFDSOI device, the electric field between the body and the source/drain (S/D) region is restrained by the block oxide resulting in...
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