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This work presents a 14nm technology designed for high speed and energy efficient applications using FDSOI transistors. −34% speed delay at same static power with −100mV Vdd supply voltage operation vs 28nm FDSOI is demonstrated. The specific FDSOI features for adjusting the threshold voltage and managing power are highlighted in this paper. It is shown that a light channel doping and reverse back...
A performance upgrade of our 14nm FDSOI technology is reported in this paper. Compared to our previous 14nm FDSOI assessment, a −17% delay at the same leakage is demonstrated. We show that the AC performance of 28nm FDSOI at a 0.9V supply voltage is reached at 0.6V in 14nm FDSOI technology. This corresponds to a 50% increase in frequency at the same dynamic power, or a 65% power saving at the same...
This paper presents a 14nm technology designed for high speed and energy efficient applications using strain-engineered FDSOI transistors. Compared to the 28nm FDSOI technology, this 14nm FDSOI technology provides 0.55× area scaling and delivers a 30% speed boost at the same power, or a 55% power reduction at the same speed, due to an increase in drive current and low gate-to-drain capacitance. Using...
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