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Double-trapping bandgap engineered SONOS (DT BE-SONOS) [1] was proposed to provide both fast erase speed and deep erase by means of a second nitride trapping layer and an additional blocking oxide on top of BE-SONOS. Although this provides excellent erase performance but the additional layers increase the EOT and subsequently the erase voltage, thus it is desirable to minimize their impact. This work...
Cryogenic ion implantation process has received increasing attention because it provides better amorphization performance and less end-of-range defects. In this study, 20nm-thick CoSi2 film was formed on cryogenic carbon ion-implanted poly-Si substrate and the agglomeration behavior of CoSi2 film after high temperature RTA annealing was investigated by four-point-probe resistivity measurement. Results...
The ubiquitous computing concept has gradually become applied on a wide range of fields. A smart home system is a representation to improve people's lives, convenience and entertainment. This study focuses on human behavior and interaction with smart home system on the field of the kitchen table, and aims to establish a new method of objects pattern recognition, a new interactive way, for smart kitchen...
With scaling down of device geometry and keeping improvement of the chip resistance capacitance (RC) delay, it is necessary to reduce k value. A porous ultra low k-value (ULK) dielectric film is integrated into Cu interconnects of advanced 40 nm. There are several papers discussing about the interface effect between ULK film and barrier on reliability performance. This paper will discuss the effect...
We have developed a new Self-aligned poly (SAP) process to improve the tunnel oxide integrity by optimizing the shallow trench isolation (STI) corner rounding profile and reducing the local oxide thinning effect. It is found that double in-situ steam generation (ISSG) liner oxides can effectively improve the STI corner rounding. As for the local oxide thinning effect, the composite pad dielectrics...
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