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A new approach has been developed to investigate the carrier transport characteristics of Dopant-Segregated Schottky (DSS) barrier MOSFET. A Velocity Saturation Model (VSM) based on experimentally measurements has been developed to determine the injection velocity (vinj) and ballistic efficiency (Bsat). DSS device with low series source/drain resistance and high Bsat of 0.47 leads to +15.2% of Id...
Based on the fully and exact two-dimensional (2-D) resultant solution of Poisson's equation in oxide and silicon regions, a 2-D analytical model for threshold voltage undoped surrounding-gate MOSFETs is derived. The model show that the threshold voltage degradation agrees well with 2-D numerical simulation results over a wide range of device parameters even when the channel length scaled down to 20nm...
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