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A charge trap folded NAND (FNAND) Flash memory device with band-gap-engineered (BE) storage node is proposed. Because of the compact cell layout without junction contacts, a NAND Flash memory is the most suitable memory medium for electronic appliances. Two memory cells are put together to have a common vertical channel, which enables one to achieve a theoretical near-30-nm technology. The resulting...
In this work, highly scalable charge trap flash (CTF) memory with bandgap-engineered storage node and vertical channel is proposed. Due to the compact cell layout without individual junction contacts, NAND flash memory has the most suitable architecture for mobile data storage media. In other to achieve even higher integration density, two NAND flash memory cells in the conventional sting are put...
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