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Light sources in the wavelength range below 300nm have attracted extensive attention due to their applications in instrumentation and in disinfection of water, air and surface. Nitride-semiconductor-based, light emitting diodes (LEDs) are of especially great interest due to numerous advantages compared to conventional mercury lamps. Although significant progress of more than 9mW of quasi-CW power...
The use of low defect density bulk AlN substrates has led to reliable pseudomorphic ultraviolet light emitting diodes capable of mW level power outputs from packaged devices emitting from 250–275 nm.
Low dislocation density, epitaxial layers of AlxGa1–xN are grown pseudomorphically on native AlN substrates prepared from high quality, bulk crystals. In addition to low dislocation density, they are atomically smooth and can be doped n‐type to obtain sheet resistances < 200 Ohms/sq/μm. These layers are used as templates for the growth of high quality multiple quantum well (MQW) structures and...
Photoluminescence lifetimes of nearly dislocation free high Al content AlGaN MQW LEDs on bulk AlN are presented as a function of temperature and excitation power for both direct photo-excitation of the wells and barriers.
The development of pseudomorphic layers on low dislocation density AlN substrates is leading to improvements in reliability and performance of devices operating in the UVC range.
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