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This paper describes how dynamic range and accuracy of an on-wafer load pull measurement system can be improved without costly investment in equipment. Applying prematching to the transistors on the wafer reduces ohmic losses, leads to a better figure of merit ΔGT, and thus increases the accuracy of the whole system. The approach is verified for X-band GaN power transistors.
In this paper, a high-gain X-band MMIC power amplifier is presented. The amplifier is based on 0.25µm-gate GaN HEMTs and realized as coplanar circuit using the 4-inch process line at FBH. The circuit delivers almost 9 W output power at 10 GHz, with final stage drain efficiency of 32%.
Progress in fabrication of packaged discrete L- and X-band power AlGaN/GaN HFETs is presented. By exploiting typical GaN HFET related features such as improved linearity, power density, gain and broad band capability the devices allow for novel architectures for base stations in mobile communications and for space applications. Highlights to be presented are L-band power bar devices designed for continuous...
Progress in fabrication of packaged discrete L- and X-band power AlGaN/GaN HFETs is presented. By exploiting typical GaN HFET related features such as improved linearity, power density, gain and broad band capability the devices allow for novel architectures for base stations in mobile communications and for space applications. Highlights to be presented are L-band power bar devices designed for continuous...
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