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In this paper, novel FinFET device structures with its bodies been connected together have been for the first time proposed by three-dimensional (3-D) simulation. The short-channel characteristics of threshold voltage (VTH), drain induced barrier lowering (DIBL), and on-off ratio current performance have been examined and explained in this paper. Also, the novel structures show the desired characteristic...
In this paper, for the first time, a novel devise-architecture namely multi-source/drain SOI MOSFET is proposed and compared with a conventional SOI MOSFET. According to the simulation result, our proposed transistor not only maintains the desirable short channel behaviour, but also enhances the on/off current ratio due to the multi-source/drain scheme.
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