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We demonstrate a NMOS Si Bulk-FinFET with extension doped by Phosphorus doped Silicate Glass (PSG). Highly doped PSG (6e21 cm−3) was used as a diffusion source. SiO2 cap on PSG decreased sheet resistance (Rs) due to less out diffusion of P. Even when thin SiO2 exists at the interface between Si and PSG, P diffused from PSG into Si. Thanks to the high etch rate of the PSG/SiO2 cap stack after drive-in...
We compare As and P extension implants for NMOS Si bulk FinFETs with 5nm wide fins. P implanted FinFETs shows improved ION, +15% with Room Temperature (RT) ion implantation (I/I) and +9% with hot I/I, keeping matched Short Channel Effects (SCE) for gate length (LG) of 30nm compared with As implanted FinFETs. Based on TCAD work, P increases activated dopant concentration in extension compared with...
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