We compare As and P extension implants for NMOS Si bulk FinFETs with 5nm wide fins. P implanted FinFETs shows improved ION, +15% with Room Temperature (RT) ion implantation (I/I) and +9% with hot I/I, keeping matched Short Channel Effects (SCE) for gate length (LG) of 30nm compared with As implanted FinFETs. Based on TCAD work, P increases activated dopant concentration in extension compared with As and 5nm fin suppresses off state leakage current under the gate efficiently even in P extension case though P diffusion is faster than As.
Financed by the National Centre for Research and Development under grant No. SP/I/1/77065/10 by the strategic scientific research and experimental development program:
SYNAT - “Interdisciplinary System for Interactive Scientific and Scientific-Technical Information”.