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In this work, the reasons for the abnormal corner effect, its impact on the saddle MOSFET device characteristics, and possible approaches to suppress it are examined through simulation. Effectively suppressing the abnormal corner effects is important for application in sub-50 nm high density high performance DRAM cell transistor.
Since recent mobile electronic devices have started to adopt NAND flash memory as their main data storage device, the demand for low cost and high density NAND flash memory has been rapidly increasing. As a promising candidate, nanowire SONOS NAND flash memory array has been introduced and reported for highly scalable device structure. However, since it is hard to bias floating body of memory cells,...
The polysilicon depletion effect is one of the key factors that degrade MOSFETs' performance. In this letter, a polysilicon depletion model for recessed-channel (RC) MOSFETs is presented. The model shows good agreement with numerical device simulation results. We also compare the polysilicon depletion effect of RC MOSFETs to that of planar MOSFETs.
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