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We present a novel silicon-based type of charge-trap memory using Al/HfO2/Al2O3/Si3N4/Si structure mimicking memory functions in a biological synapse. The quantity of the trapped charge in the proposed Al2O3/HfO2/Si3N4 stack is estimated by measuring the capacitance over time, which can be regarded as synaptic weight changes. By applying repeated voltage pulses at periodic intervals of different times,...
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