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Intrinsic stresses in bondpads may lead to early failure of IC’s. In order to determine the intrinsic stresses in semiconductor structures, a new procedure is set up. This procedure is a combined experimental/numerical approach which consists of the following steps: First, a conductive gold layer (20nm thickness) is deposited on the power line surface; subsequently markers (small holes) for Digital...
Intrinsic stresses in bondpads may lead to early failure of IC's. In order to determine the intrinsic stresses in semiconductor structures, a new procedure is set up. This procedure is a combined experimental/numerical approach which consists of the following steps: First, a conductive gold layer (20 nm thickness) is deposited on the power line surface; subsequently markers (small holes) for Digital...
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