The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We demonstrate room-temperature transparency and optically pumped lasing with an InGaAs quantum well active region integrated in an InP nanoresonator cavity grown monolithically on silicon. As-grown silicon transparent lasers will enable on-chip optical interconnects.
We proposed, fabricated, and characterized new structures based on III-V compound semi-conductor nanopillars, monolithically integrated to silicon platform, for coupling spontaneous and stimulated emission to silicon waveguides.
We demonstrate InP nanopillar bipolar junction phototransistors monolithically integrated on a Silicon substrate. With a responsivity of 4 A/W and bandwidth of 7.5 GHz, these receivers indicate a route towards efficient on-chip optical interconnects.
The synthesis of III-V nanowires on silicon substrates is promising for reducing the manufacturing and balance-of-systems costs of III-V based photovoltaics. However, performances of III-V nanowire based solar cells have not yet been close to their bulk counterparts as nanostructures are fundamentally challenged by enhanced non-radiative losses due to their large surface-to-volume ratios, resulting...
InGaAs nanopillar lasers directly grown on the gate, source and drain areas of Si-MOSFET are demonstrated for the first time using 410°C MOCVD. This represents the first monolithic integration of lasers on functional transistors.
InGaAs nanoneedle lasers were grown on both polycrystalline-Si and (100)-Si substrates by low temperature (400 °C) MOCVD. Measured near field mode patterns agree well with FDTD simulations, confirming helically propagating modes as lasing modes.
MOCVD growth of single crystalline GaAs-based nanoneedle/nanopillar lasers on polycrystalline silicon is demonstrated. Superior material quality, high density and light trapping capability make these structures on polysilicon-based substrates attractive for low-cost and high-efficiency photovoltaic applications.
Planar lenses using sub-wavelength high contrast grating are investigated. By designing the phase of the grating, high numerical aperture lenses can be achieved, with small spherical aberration and low insertion loss.
Fast ammoniating system is a new ammoniated instrument. In the system, rice straw can be ammoniated under different pressures of gaseous ammonia. This study was conducted to investigate the effects of different pressures on the structure of rice straw stem tissues after being ammoniated in the system. In this experiment, rice straw was ammoniated in the fast ammoniating system, and the pressures were...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.