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Single-transistor floating-body RAM (FB-RAM) cells present a promising alternative for scalable high-density storage since both access and storage elements are implemented using a single FET-based device. Unlike embedded dynamic RAM (eDRAM) technology, the concept is fully scalable with decreasing technology nodes. However, to make the concept truly usable, special biasing conditions of the device...
Single transistor Floating Body Random Access Memories (FB-RAMs) are foreseen to bring size and speed benefits and have the potential to replace existing DRAMs. However, the implementation in matrix is complex because the voltages applied to access one cell can disturb the state of other cells. We propose an approach at circuit level to provide compatible bias conditions and to explore further on...
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