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We have proposed inhibition mechanism of common Al-capping technique for pMOSFET threshold-voltage (Vth) control for the first time, and have established effective Ti-capping technique using metal gate and Hf-based high-k dielectrics. Ti-capping technique can adjust lower Vth than Al-capping one due to the suppression of counter dipole and solid solubility limit in doping. Moreover, Ti-capping technique...
We investigated the influence over intermittent SRAM failure by gate current, Ig, fluctuation for the first time. In this paper, we also describe the difference of SRAM failure due to Ig flutuations between MOS transistors before and after stressing. We have quantitatively confirmed that Ig fluctuation causes SRAM failure.
TiN films were deposited both by electron beam (EB) sustained Ti arc ion plating and by reactive magnetron sputtering in nitrogen atmosphere. Although the optical emission measurement revealed totally different features of the excited species in the two discharges, stoichiometric TiN films were obtained by both techniques. Different mechanisms of film formation in the two methods were proposed. The...
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