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Silicon quantum dots (QDs) thin films and superlattice embedded in SiC matrix are prepared by co-sputtering of pure Si and C targets for all silicon tandem solar cell application. The composition of as-deposited Si1-xCx precursor films can be controlled by changing rf power of Si and C targets, respectively. The composition x from 0 to 0.43 is investigated by changing C power from 0 to 400W under...
The n-type hydrogenated microcrystalline silicon-incorporated silicon oxide (n-μc-SiO:H) films are prepared by 13.56 MHz plasma enhanced chemical vapor deposition (rf-PECVD) using SiH4, H2 and CO2 gases for an inter-layer between the amorphous silicon (a-Si:H) top-cell and the microcrystalline silicon (μc-Si:H) bottom-cell in the thin-film silicon tandem solar cells. The optical and electrical properties...
ZnO is used as a transparent conducting oxide (TCO) for the front electrode in silicon thin film solar cells because of its low resistivity and high optical transmittance. Hydrogenated Al-doped zinc oxide (AZO:H) thin films were grown on glass by rf magnetron sputtering using a ceramic target (98 wt. % ZnO, 2 wt.% Al2O3) in H2/Ar ambient. We changed the ratio of H2/(Ar+H2) and the substrate temperature...
Molybdenum films were prepared on soda-lime glass substrates by DC magnetron sputtering and its structural, morphological properties, electrical resistivity and optical reflectance were analyzed. The electrical resistivity of the Mo films was monotonically increased with the increase in the gas pressure. The lowest resistivity was 1.2 /spl times/ 10/sup -5/ /spl Omega//spl middot/cm The films grew...
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