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We present an investigation of shot noise in graphene-based Hall sensors, with the purpose of evaluating their detection limit and of developing strategies to improve their characteristics. We perform measurements on two devices, one with a defective contact that could however be used as a gate to control the carrier density in the device and the other with all contacts working. We discuss the results...
We present numerical simulations that we have performed with the aim of interpreting the results of the transport measurements that we have recently obtained on a graphene device in which a cavity-shaped potential, orthogonal to the transport direction, had been induced with electrostatic lithography. The resistance of the sample has been computed for a broad spectrum of possible potential configurations,...
We have developed a code for the simulation of graphene-based devices consisting of cascaded armchair sections with width discontinuities, in the presence of a generic potential landscape. This is based on a scattering-matrix approach and on the solution of the Dirac equation in the reciprocal space. The presence of width discontinuities requires a particular treatment of the continuity equation for...
We present a numerical method which allows an approximate but fast computation of the potential profile in a graphene sample subject to the electrostatic action of biased gates, including the effect of different contributions, such as those from doping or from charged impurities. The procedure is applied to the evaluation of the effect of a biased probe, coupled to the graphene flake through a space-dependent...
We compute, using a continuum model based on the Dirac equation, the transverse modes and the longitudinal wave vectors in an armchair ribbon, in the presence of a transversally variable external potential. We show that the application of a standard finite difference method to this problem is not effective, since it can lead to the appearance of spurious solutions and to poor precision. We show how...
In this paper we show how numerical and analytical modeling of graphene-based devices is used to consider possible approaches to engineer a gap in graphene and to evaluate the perspectives of different technological options towards graphene nanoelectronics.
We have performed a numerical investigation of the effect of boron doping on the dispersion relations of armchair graphene nanoribbons, finding that it should reduce the strong variability of the energy gap predicted for atomic-scale fluctuations of the nanoribbon width. We also present the transport characteristics that we have obtained, within a self-consistent Non Equilibrium Green's Function (NEGF)...
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