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Pentacene organic thin-film transistor (OTFT) using Pd as gate electrode is proposed, with high-k LaZrO as gate dielectric. The Pd film is prepared by e-beam evaporation and then the LaZrO film is deposited by reactive sputtering in Ar/O2 ambience followed by an annealing in N2 at 400 °C. The OTFT achieves an obvious increase in carrier mobility (to 1.02 cm2/V·s), as compared with its counterpart...
Pentacene thin-film transistor with high-κ ZrLaO gate dielectric has been fabricated for the first time. After treating the dielectric in a fluorine plasma, the carrier mobility of the transistor can be greatly improved to 0.717cm 2 /Vs, which is more than 40 times that of one without plasma treatment. The major reasons should be larger pentacene grains and fewer traps in the device with gate...
OTFTs with HfTiO2 as gate dielectric have been successfully fabricated. The devices show small threshold voltage and subthreshold slope, and thus are suitable for low-voltage and low-power applications. This work also finds that OTFT with gate dielectric annealed in N2O has larger dielectric constant, smaller threshold voltage, smaller subthreshold slope and larger on/off ratio than the N2-annealed...
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