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OTFTs with HfTiO2 as gate dielectric have been successfully fabricated. The devices show small threshold voltage and subthreshold slope, and thus are suitable for low-voltage and low-power applications. This work also finds that OTFT with gate dielectric annealed in N2O has larger dielectric constant, smaller threshold voltage, smaller subthreshold slope and larger on/off ratio than the N2-annealed...
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